Which Research Design I Can Use in My Profession Paper

Which Design I Can Use in My Profession - Research Paper Example Currently, scholars are using the design to measure student s’ performance based on other learning disabilities and language level of understanding (Hattie, 2012). This design is mainly used by educationists in matters of education disparities among people within a given community. One significant factor to put into consideration when describing gaps in education is the level education benchmarks. As stated in the Education Week, several communities have not been able to solve these gaps in education brought because of race of economic status, racial discrimination, teacher’s professional competence, and learners’ intellectual backgrounds (Hattie, 2012). This disparity has been found to exist between children in early childhood schools, secondary schools, and even in the eighth grade in middle schools (Clotfelter, Helen and Jacob, 2009). Some of the recommendations made to reduce the achievement gap between students include reduced class sizes, developing small learning environments that teachers can easily handle, developing comprehensive early childhood programs, taking teachers for in service training and raising academic standards for all students (Johnson, 2002). All these recommendations can only be achieved through use of information obtained using the achievement gap design. It is important to look at information obtained in terms of evaluating studies from the academic literature that can be used to bridge the gap (Hattie, 2012). This is important because it produces information obtained from comprehensive research conducted by education experts. Schools can also use the information obtained to solve problems that generate the achievement gaps within the schools. Finally, the information obtained can be used to evaluate students’ performance. It is through the information that teachers can know how t o handle students in the classroom (Hattie, 2012). This

Applying Standardized Terminologies in Practice Assignment

Applying Standardized Terminologies in Practice - Assignment Example Application of SNTs is fundamental to the advancement of nursing as a career (NANDA International, 2014). This article tries to identify related elements of North American Nursing Diagnosis Association (NANDA), Nursing Outcomes Classification (NOC), and the Nursing Interventions Classification (NIC). A patient scenario will be used in the identification of how the elements of NANDA, NOC, and NIC are applicable. The patient scenario will be created using the framework of Data, Information, Knowledge, and Wisdom (DIKW). At a local hospital, in the Pediatric Acute room, a four year old female child gets an admission one week after undergoing chemotherapy. The child has a fever of 102.5 F. Her white blood cells (WBC) are 0.3 and the neutrophil count (absolute) is 0. A new central line was placed about 10 days ago. In addition, the child has nausea and vomiting (C/O). She also cries a lot and when the nurse approaches, she hides behind her mother. NANDA often comprises nursing diagnosis, which includes classifications and definitions (NANDA International, 2014). NOC comprises the categorization of nurse responsive results. It is a categorization of the nurse sensitive outcomes. The indicators and outcomes provide a chance for the measurement of the outcomes of the patient, community, or family at any juncture on a scale from most negative to most positive at different junctures. A name or a neutral label is used to characterize patient status or behavior. Also, there is utilization of list of indicators, which describes patient status or behavior. In addition, it involves a five point scale used in rating the status of a patient for every indicator (Iowa Outcome Project, 2012). NIC describes treatments used by nurses during practice in all facilities and all specialties. Actually, it comprises the interventions made by nurses. Further, NIC comprises a label or name, a definition,

Is Nick a Good Narrator Essay Example for Free

Is Nick a Good Narrator Essay As the teller of facts for all of his observations, Nick proves to be a reliable narrator for this story. He is unaffected by what goes on around him, despite people bringing him into personal situations. Nick is factual with details. He is as well, a very private person though, and tells us little of himself during the events. In telling us about his growing up years shows us that Nick has learned many admirable things. In Chapter 1 he tells us how he was raised and the advices given him by his father. These included council on how to speak to people in general. As quoted by Nick, his father told him â€Å" ‘Whenever you feel like criticizing any one’ he told me, ‘just remember that all the people in this world haven’t had the advantages that you’ve had. ’ â€Å" He admits to us here that â€Å"In consequence I’m inclined to reserve all judgments†. He did not appear to like being drawn into drama and would avoid it at all cost. The abnormal mind is quick to detect and attach itself to this quality when it appears in a normal person, and so it came about that in college I was unjustly accused of being a politician, because I was privy to the secret griefs of wild, unknown men. Most of the con? dences were unsought frequently I have feigned sleep, preoccupation, or a hostile levity when I realized by some unmistakable sign that an intimate revelation was quivering on the horizon. † When describing events, Nick seems again unattached. He tells us what people wear, what they say and how they say it, with much emotion. On his own home in the af? uent area that he had moved (Chapter 2) â€Å"My own house was an eye-sore, but it was a small eye-sore, and it had been overlooked, so I had a view of the water, a partial view of my neighbor’s lawn, and the consoling proximity of millionaires all for eighty dollars a month. When he tells us about Tom he explains (Chapter 2) â€Å"His speaking voice, a gruff husky tenor, added to the impression of fractiousness he conveyed. There was a touch of paternal contempt in it, even toward people he liked—and there were men at New Haven who had hated his guts. When he introduces Daisy and Jordon for the ? rst time in (Chapter 2) â€Å"The only completely stationary object in the room was an enormous couch on which two young women were buoyed up as though upon an anchored Is Nick a good Narrator? ESSAY THE GREAT GATSBY! PJD balloon. They were both in white and their dresses were rippling and fluttering as if they had just been blown back in after a short flight around the house. † he then goes on with further detail â€Å"The younger of the two was a stranger to me. She was extended full length at her end of the divan, completely motionless and with her chin raised a little as if she were balancing something on it which was quite likely to fall. If she saw me out of the corner of her eyes she gave no hint of it—indeed, I was almost surprised into murmuring an apology for having disturbed her by coming in. The other girl, Daisy, made an attempt to rise—she leaned slightly forward with a conscientious expression— then she laughed, an absurd, charming little laugh, and I laughed too and came forward into the room. The only time we see him express any real emotion is when he realizes that they are all sitting around doing a lot of nothing except to anger and upset each other and that not one person has wished him a ‘Happy Birthday’ that day. He himself, until that moment had forgotten that he turned 30 on that extraordinarily hot day (Chapter 7) â€Å"‘No I just remembered that today’s my birthday. ’ I was thirty. Before me stretched the portentous menacing road of a new decade. † Nick’s privacy is highlighted in events that have taken place in the novel, but not carried forward with any great detail. Though he describes his college year, followed by his time in the army and going to war, he leaves a lot of personal things out. The ? rst couple of things that stand out regarding his personal privacy. He makes friends with a co-worker and after knowing each other a very short time, the two decide to rent a house together in the country. The friend is shipped off to Washington by the ? rm immediately on renting â€Å"a weather beaten cardboard bungalow at eighty a month†. In that same paragraph, we learn that Nick has a dog with him â€Å"at least I had him for a few days until he ran away. Nor does he talk about having a girlfriend out west or someone that he has befriended at very least, though in Chapter 2 after he meets his cousin Daisy, her husband (and Nick’s former classmate) Tom and their friend Jordan Baker (a Is Nick a good Narrator? ESSAY THE GREAT GATSBY! PJD professional golfer). Daisy suddenly says to Nick, as he is leaving â€Å" ‘I forgot to ask you something, and it’s important. We heard you were engaged to a girl out West. ’ â€Å" Nick wards of the question saying â€Å" ‘It’s libel. I’m too poor. â€Å" He then goes on privately that he was aware of this story, but that it was not true. He says â€Å"The fact that gossip had published the banns was one of the reasons I had come east. † He only refers to the woman at hand as an â€Å"old friend†. Nick spoke with clarity on the events of the summer. He described in detail, the costuming and events, the locations and people. Nick seemed unbiased and disconnected in an unemotional way, until the events of his own birthday. Overall, Nick seemed to have a good grasp of the people and events of that summer, while leaving details of himself to be determined.

Transition Elements as Deep Level Dopant

Transition Elements as Deep Level Dopant HIGH RESISTIVITY SILICON: DEEP-LEVEL DOPING COMPENSATION USING ELEMENTAL GOLD INTRODUCTION 1.1  Research Background Monolithic microwave integrated circuit (MMIC) is a microwave circuit in which both active and passive components are fabricated on the same semiconductor substrate [1]. The development of MMICs has been augmented by the high demand for high-speed devices operating at microwave frequency ranging between 300 MHz and 300 GHz. Their advantages of being small, light, and cheap in large quantities have allowed the proliferation of high frequency devices such as cellular phones. However, a problem will arise when standard silicon (Si) substrate is used to operate in super high frequency environment (SHF). The high absorption of microwave power will be caused by the background free carriers present in the substrate [2]. Therefore, low loss and high resistivity substrates are needed to eliminate the problem. It can be achieved by reducing the number of background free carriers in the substrate which result in degradation of circuit performance. The III-V semiconductor materials such as GaAs, GaN and InP has been widely used in the production of high resistivity substrates due to their wide bandgap nature. However, the wafer diameter produced using III-V materials is typically from 4 to 6 [3]. This increases the cost of production since the standard wafer diameter for modern CMOS technology is 12 [4]. Furthermore, the lattice-mismatch problems will complicate the fabrication process, causing the cost to increase. Therefore, Si has been considered to be an alternative material for the III-V semiconductor compound due to less fabrication complexity and cost. However, the background impurities such as boron will enter the silicon during monocrystalline Si growth causing the increase in substrate losses at microwave range [5]. There have been efforts to use the silicon-on-insulator (SOI) technologies and silicon-on-anything (SOA) to overcome the problem. The SOI wafers can be produced by several methods: silicon-on-sapphire (SOS), separation by implanted oxygen (SIMOX), bond and etch-back SOI (BESOI), Smart Cutà ¢Ã¢â‚¬Å¾Ã‚ ¢ [6], and epitaxial layer transfer (ELTRAN ®) [7]. For SOS approach, a thin film of Si is epitaxially grown on sapphire substrate as shown in figure 1.1. Meanwhile, the other four approaches use a similar cross section of SOI wafer as shown in figure 1.2(b) which consists of three layers: SOI layer (top layer), buried oxide (BOX) layer (middle layer) and silicon substrate (bottom layer). The purpose of the BOX layer is to electrically insulate a fine layer of SOI layer (where the circuits are placed) from the rest of the Si wafer. The SIMOX approach uses implanted silicon dioxide, SiO2 layer as the BOX layer to separate the top thin Si layer from Si substrate. Figure 1.1: Cross-section of silicon-on-sapphire (SOS) wafer [8] Figure 1.2: A schematic representation of bond and etch-back (BESOI) process [9] Apart from the mentioned approaches, BESOI, Smart Cutà ¢Ã¢â‚¬Å¾Ã‚ ¢, and ELTRAN ® methods involve the wafer bonding technique. For BESOI method, the thermally oxidised Si wafer (also known as handle wafer) is bonded to another Si wafer which acts as bond wafer as shown in figure 1.2(a). After the wafer bonding process, the top wafer will be etched to obtain the required thickness for SOI layer as shown in figure 1.2(b). On the other hand, implantation of gas ions, most commonly hydrogen is made after the oxidisation process for Smart Cutà ¢Ã¢â‚¬Å¾Ã‚ ¢ method as shown in figure 1.3. The implantation process is meant for layer splitting process to achieve required thickness of SOI layer after the wafer bonding process. The processes involved in ELTRAN ® method is shown in figure 1.4. The ELTRAN ® method uses similar procedures in Smart Cutà ¢Ã¢â‚¬Å¾Ã‚ ¢ with the difference in use of double layer porous Si layer instead of implantation of hydrogen ions. The advan tage of using Smart Cutà ¢Ã¢â‚¬Å¾Ã‚ ¢ and ELTRAN ® methods is that the initial wafer or seed wafer can be reused for the same process. Figure 1.3: Smart Cutà ¢Ã¢â‚¬Å¾Ã‚ ¢ process for production of SOI wafers [9] Figure 1.4: ELTRAN ® process flow based on seed wafer reusage [7] Meanwhile, the SOA technology is achieved by gluing a fully-processed SOI substrate to another substrate such as glass and alumina [10]. However, the on-chip dissipation which could cause thermal breakdown had been proven to be a severe issue [11]. Therefore, there is a need to look for the alternative to SOI and SOA wafers, which is the high resistivity bulk Si substrate. In 2009, International Technology Roadmap for Semiconductors (ITRS) had stressed the importance of high resistivity Si in radio frequency (RF) and analog/mixed signal (AMS) CMOS application [12]. There are generally two techniques for Si crystal growth: Czochralski (CZ) technique and float-zone (FZ) technique [13]. A simplified version of CZ puller, which is an apparatus used to produce monocrystalline Si ingots for CZ technique is shown in figure 1.5. The high purity polysilicon, known as electronic grade silicon (EGS) is melted in a rotating silica or quartz crucible. A seed crystal is placed in the melt and then slowly withdrawn from the melt. The molten silicon adhering to the crystal freezes or solidifies into a continuous crystal from the seed. The diameter of the crystal can be maintained by controlling the temperature of the crucible and the rotating speed of the crucible and the rod. However, the CZ process will introduce contamination to the monocrystalline Si due to the presence of oxygen, carbon monoxide and impurities such as boron and phosphorus. Figure 1.5: Czochralski crytal puller. CW represent clockwise rotation and CCW represents counter clockwise rotation [13] The FZ process, on the other hand, produces Si crystals with lower contamination as no crucible is used in the process. FZ crystals are mainly used for high power and high voltages devices due to its high resistivity. There is a commercially available high resistivity FZ-Si technology called HiResà ¢Ã¢â‚¬Å¾Ã‚ ¢ [14]. The bulk resistivity of Si produced through HiResà ¢Ã¢â‚¬Å¾Ã‚ ¢ is up to 70 kÃŽÂ ©-cm, which is suitable for future GHz and THz application. However, it is not suitable for modern CMOS processing since its maximum wafer diameter is limited to 8, which will increase the cost. Therefore, there is a need to produce high resistivity bulk CZ-Si substrate due to its low fabrication cost. Therefore, CZ process is still the most widely used method in the manufacturing of single crystal silicon. In 2003, Mallik et al. [2] introduced a new idea in developing a semi-insulating silicon through a method called deep-level doping concentration using 3d transition elements. It showed that there is possibility to produce high resistivity bulk CZ-Si substrate using deep level doping compensation. Following this work, Mallik et al. [5] managed to produce CZ-Si bulk substrate using Mn with resistivity of up to 10 kÃŽÂ ©-cm. Jordan et al. has also used Au to produce CZ-Si wafer with bulk resistivity of up to 180 kÃŽÂ ©-cm [15]. The use of Au-compensated high resistivity bulk Si substrate has been proven by Nur Z. I. Hashim et al. to be able to suppress the parasitic surface conduction (PSC) effect [16]. 1.2  Problem Statement The idea introduced by Mallik et al. [2] on developing high resistivity bulk Si substrate through deep-level doping compensation is solely based on p-type CZ-Si. Even though high resistivity bulk Si substrate has been proven to be achievable using p-type CZ-Si, it has been shown in the work by Jordan et al. [15] that higher magnitude of Au-compensated high resistivity bulk Si substrate can be achieved by using n-type CZ-Si. The potential and problem of using transition elements other than Au as the deep level dopants to produce high resistivity bulk n-type CZ-Si substrate have not been discussed by the work mentioned above. 1.3  Objectives of Research There are three main objectives that must be met in this research project: To investigate the potential of using transition elements as deep level dopant for n-type Si substrate as compared to p-type Si substrate. To analyse the result obtained through numerical calculation using MATLAB by comparing it with the experimental data. To make comparative study on the resistivity and effectiveness of the high resistivity bulk substrate produced using n-type CZ-Si with other materials such as III-V semiconductor materials. 1.4  Scope of Research The scope of this project is to analyse the resistivity plot generated by numerical calculation using MATLAB. The potential and effectiveness of each of the transition elements as deep level dopants for n-type CZ-Si will be discussed in this work. The fabrication and experiment of high resistivity bulk n-type CZ-Si substrate will not be conducted in this work. The experimental data used for comparison with the result of numerical calculation is obtained from Dr. Nur Zatil Ismah Hashim which was done at Southampton Nanofabrication Centre in 2015. LITERATURE REVIEW 2.1  Introduction There are several methods to produce high resistivity bulk Si substrate, namely proton implantation method, helium-3 ion irradiation and deep-level doping compensation method. Both proton implantation method and helium-3 ion irradiation use the charge trappings to reduce the current conduction by background free carriers. Meanwhile, the deep-level doping compensation method use the deep dopants to compensate the shallow dopants in the Si substrate. 2.2  Proton Implantation Method One of the methods to increase the resistivity of CZ-Si substrate is through proton implantation method. The bombardment of protons into Si bulk structure will create defects which can trap mobile carriers. Therefore, the carrier lifetime is low due to the presence of defects, which prevents the mobile carriers from conducting current freely in the substrate. Table 2.1 summarizes the studies conducted to produce high resistivity bulk CZ-Si substrate using proton implantation method. Table 2.1: Studies on high resistivity bulk CZ-Si substrate using proton implantation method. Contributor Year Proton Implantation Energy (MeV) Resistivity of the Produced Substrate (ÃŽÂ ©-cm) Li 1989 0.18 103 Liao et al. 1998 30 106 Wu et al. 2000 10 106 Rashid et al. 2002 17.4 105 In 1989, Li [17] managed to produce a high resistivity layer beneath Si surface layer using proton implantation and two-step annealing process. The implantation of proton and annealing process formed the buried defect layer with a resistivity of up to 103 ÃŽÂ ©-cm. Meanwhile, Liao et al. created semi-insulating regions within silicon substrate with a resistivity of 1 MÃŽÂ ©-cm [18]. It was achieved by bombarding proton beams at 30 MeV from a compact ion cyclotron to the surface of Si substrate. Following this work, the Si substrate with similar resistivity had been produced by Wu et al. using a lower proton implantation energy, which is 10 MeV [19]. In 2002, Rashid et al. reported a Si substrate with a resistivity of 0.1 MÃŽÂ ©-cm produced through their six-step implantation method using an implantation energy of 17.4 MeV [20]. The high-Q inductors and high transmission gain integrated antenna have been realised on the high resistivity Si substrate by Liao et al. and Rashid et al. respectively [18], [20]. However, the high process cost is needed for proton implantation method as an enormous dose of 1015 cm-2 to maintain the resistivity of the originally 15 ÃŽÂ ©-cm Si substrate to be higher than 1014 ÃŽÂ ©-cm [21]. 2.3  Helium-3 Ion Irradiation Technique In 1987, helium-3 ion irradiation technique has been used for carrier lifetime control of silicon power devices [22]. The charge trappings created by the helium irradiation and Coulomb scattering of the charged trap will prevent the conduction of current by free mobile carriers in the substrate [23]. Therefore, a high resistivity Si bulk substrate can be realised by the reduction in carrier lifetime. In 2014, N. Li et al. reported a high resistivity region created within CZ-Si substrate with a resistivity of over 1.5 kÃŽÂ ©-cm using a dose of 1.51013 cm-2 of helium-3 ions [24]. The produced high resistivity Si substrate has been used by N. Li et al. in both work for substrate noise isolation improvement in a CMOS process and quality factor improvement in on-chip spiral inductors [24], [25]. R. Wu et al. has also used helium-3 ion irradiation technique in their work on radiation efficiency improvement in 60-GHz on-chip dipole antenna [23]. The helium-3 ion irradiation technique has the advantage of saving the product cost up to 97% as compared to proton implantation method by reducing the dose amount from 1.01015 cm-2 to 1.51013 cm-2 [24], [25]. However, the helium-3 ion irradiation technique is comparably less studied and the problem associated with this technique has not been discussed in the work mentioned above. 2.4  Deep-Level Doping Compensation Method The idea of creating high resistivity bulk CZ-Si substrate using deep-level doping compensation has been proposed by Mallik et al. in 2003 [2]. The basic principle of this method is compensating shallow impurities with deep impurities, i.e. shallow donors are being compensated by deep acceptors (as shown in figure 2.1) whereas shallow acceptors are being compensated by deep donors (as shown in figure 2.2). Figure 2.1: Compensation between shallow donors and deep acceptors [26] Figure 2.2: Compensation between shallow acceptors and deep donors [26] As illustrated in figure 2.1, deep acceptors introduced an energy level at EA, which is close to the intrinsic Fermi level. The deep acceptors which are negatively charged attract the minority carrier holes to be trapped at EA level. The electrons from shallow donors are initially excited to the conduction band, then fall to EA level to recombine with the holes. On the other hand, the positively charged deep donors introduced an energy level at ED as shown in figure 2.2. The minority carrier electrons are attracted and trapped at ED level while the holes from shallow acceptors will fall into valence band. The trapped electrons at ED level then fall into valence band to recombine with the holes. Therefore, there is no generation of free carriers which reduces the resistivity of the substrate in both cases. Figure 2.3 shows the resistivity of Si at 300K with a background boron concentration of 1014 cm-3, compensated using deep donor impurities with generic energy level positions below conduction band edge, ED. It can be observed that the resistivity of Si increases until a maximum value is reached while the concentration of deep donors, ND increases. The resistivity is low initially due to undercompensation caused by insufficient number of deep donors. The maximum value of the resistivity of Si is reached when deep donors exactly compensate the boron acceptors. Further increase in ND causes overcompensation which results in a fall in the resistivity of Si, making the substrate tends to become n-type. Figure 2.3: Calculated resistivity of Si at 300K as a function of generic donor concentration for background boron concentration of 1014 cm-3 [2] Table 2.2: Positions of energy levels of transition elements in Si [27] Element Donor level below EC (eV) Acceptor level above EV (eV) Co 0.89 0.82 Pd 0.84 0.9 Au 0.78 0.56 Ag 0.75 0.545 V 0.45 0.92 Mn 0.42 1.0 Pt 0.314 0.889 It can be noted that the resistivity peaks are sharper for ED which is lower than 0.3 eV while the resistivity remains high over a range of relatively low concentration values for larger values of ED. For small values of ED, almost all donors are ionised and take part in the compensation since the donor energy level is nearer to the conduction band than Fermi level. A slight increase in ND causes the resistivity to decrease sharply, changing the material to n-type. Meanwhile, for large values of ED, the donor level is near intrinsic Fermi level and less fraction of deep donors is ionised. Therefore, the compensation change gradually with the increase in ND and the resistivity remain high over a wide range of ND. The transition elements are used as deep level dopants as they introduce a pair of deep donor and deep acceptor levels into the Si band gap as shown in table 2.2. The deep dopant energy levels introduced by the transition elements pin the Fermi level near the middle of the Si band gap as shown in figure 2.4 [15]. Thus, high resistivity CZ-Si substrate can be achieved by capturing the free carriers by deep impurities, which reduces the concentration of background free carrier. Figure 2.4: Fermi level pin by deep levels introduced by transition elements [15] Figure 2.5: Calculated resistivity of Si at 300K as a function of Au, Ag, Co and Pd for three different background boron concentration in cm-3 [2] Figure 2.6: Calculated resistivity of Si at 300K as a function of (a) Pt (b) V and (c) Mn concentrations for three different background boron concentrations in cm-3 [2] Figure 2.7: Calculated resistivity of Si as a function of Au concentration for n-type and p-type Si with a shallow doping concentration of 1014 cm-3 [28] The transition element dopants are generally grouped into two categories: Au, Ag, Co and Pd are in first category whereas Pt, V and Mn are in second category. As illustrated in figure 2.5, the resistivity of p-type CZ-Si substrate increases with increasing concentration of the deep dopants in first category. The behaviour of impurities in first category is due to presence of both deep donor and acceptor levels very near intrinsic Fermi level of Si bandgap. For Au and Ag, the resistivity of Si reaches a plateau at the concentration of deep dopants over 1016 cm-3 for three different background boron concentration. The reason for the slight difference in the behaviour of Au and Ag is that the both donor and acceptor level is nearer to the middle in the Si bandgap as compared to Co and Pd. For the second category of deep dopants, the resistivity of p-type CZ-Si reaches a peak and then reduce sharply with the increase in the concentration of the deep dopants as shown in figure 2.6. The reason of the difference in the behaviour is that the impurities in second category have either donor or acceptor level near the intrinsic Fermi level. Therefore, the dopants in second category can only compensate for a single type of doped silicon substrate. The effect of using 3d transition elements as deep level dopants in n-type CZ-Si substrate has not been shown in the work by Mallik et al. Meanwhile, it is shown in the work by Jordan et al. that higher bulk resistivity of Au-compensated Si substrate can be achieved by using n-type CZ-Si as shown in figure 2.7 [28]. The n-type Au-compensated Si substrate with resistivity up to 70 kÃŽÂ ©-cm has been used by Nur Z. I. Hashim et al. for realisation of coplanar waveguides (CPW) on the substrate [29]. Therefore, the potential and problem of using 3d transition elements for deep level compensation in n-type CZ-Si substrate will be discussed in this work. 2.5  Summary The realisation of high resistivity bulk Si substrate using proton implantation method and helium-3 ion irradiation technique was studied. The fabrication of high-Q inductors and antenna has been done on the Si substrate produced using both methods. However, there are problems associated with both methods such as high product cost for proton implantation method and being comparably less studied for helium-3 ion irradiation. Therefore, the idea of creating a semi-insulating silicon substrate using deep-level doping compensation with 3d transition elements was proposed by Mallik et al. in 2003. The deep-level doping compensation method has since been well studied and used for the fabrication of coplanar waveguides and inductors by Nur Z. I. Hashim et al. References [1]I. D. Robertson and S. Lucyszyn, RFIC and MMIC Design and Technology. IET, 2001. [2]K. Mallik, R. J. Falster, and P. R. Wilshaw, Semi-insulating silicon using deep level impurity doping: problems and potential, Semicond. Sci. Technol., vol. 18, no. 6, p. 517, 2003. [3]Products Capabilities | EpiWorks, EpiWorks. [Online]. Available: http://www.epiworks.com/products-capabilities/. [Accessed: 28-Feb-2017]. [4]Global Manufacturing at Intel, Intel. [Online]. Available: http://www.intel.co.uk/content/www/uk/en/architecture-and-technology/global-manufacturing.html?wapkw=wafer+size_ga=1.16867193.1775779534.1436014173. [Accessed: 28-Feb-2017]. [5]K. Mallik, C. H. De Groot, P. Ashburn, and P. R. Wilshaw, Enhancement of resistivity of Czochralski silicon by deep level manganese doping, Appl. Phys. Lett., vol. 89, no. 11, p. 3, 2006. [6]Smart Cut technology, Smart Choice Soitec, Soitec. [Online]. Available: https://www.soitec.com/en/products/smart-cut. [Accessed: 28-Feb-2017]. [7]T. Yonehara and K. Sakaguchi, ELTRAN  ®Ãƒ ¢Ã¢â€š ¬Ã‚ ¯; Novel SOI Wafer Technology, vol. 4, no. 4, pp. 10-16, 2001. [8]S. Iwamatsu and M. Ogawa, Silicon-on-sapphire m.o.s.f.e.t.s fabricated by back-surface laser-anneal technology, Electron. Lett., vol. 15, no. 25, pp. 827-828, 1979. [9]G. K. Celler and S. Cristoloveanu, Frontiers of silicon-on-insulator, J. Appl. Phys., vol. 93, no. 9, pp. 4955-4978, 2003. [10]R. Dekker, P. G. M. Baltus, and H. G. R. Maas, Substrate transfer for RF technologies, IEEE Trans. Electron Devices, vol. 50, no. 3, pp. 747-757, 2003. [11]N. Nenadovic, V. DAlessandro, L. K. Nanver, F. Tamigi, N. Rinaldi, and J. W. Slotboom, A back-wafer contacted silicon-on-glass integrated bipolar process. Part II. A novel analysis of thermal breakdown, IEEE Trans. Electron Devices, vol. 51, no. 1, pp. 51-62, 2004. [12]RF and AMS tech for wireless communications, International Technology Roadmap for Semiconductors, 2009. [Online]. Available: http://www.itrs2.net/itrs-reports.html. [Accessed: 28-Feb-2017]. [13]S. M. Sze, Semiconductor Devices: Physics and Technology, 2nd ed. New York: John Wiley and Sons, 2002. [14]High resistivity silicon for GHz and THz technology, Topsil. [Online]. Available: http://www.topsil.com/en/silicon-products/silicon-wafer-products/hiresTM.aspx. [Accessed: 28-Feb-2017]. [15]D. M. Jordan, R. H. Haslam, K. Mallik, and P. R. Wilshaw, The Development of Semi-Insulating Silicon Substrates for Microwave Devices, Electrochem. Soc., vol. 16, no. 6, pp. 41-56, 2008. [16]N. Z. I. Hashim, A. Abuelgasim, and C. H. De Groot, Suppression of parasitic surface conduction in Au-compensated high resistivity silicon for 40-GHz RF-MMIC application, 2014 Asia-Pacific Microw. Conf., pp. 55-57, 2014. [17]J. Li, Novel semiconductor substrate formed by hydrogen ion implantation into silicon, Appl. Phys. Lett., vol. 55, no. 21, pp. 2223-2224, 1989. [18]C. Liao et al., Method of creating local semi-insulating regions on silicon wafers for device isolation and realization of high-Q inductors, IEEE Electron Device Lett., vol. 19, no. 12, pp. 461-462, 1998. [19]Y. H. Wu et al., Fabrication of very high resistivity Si with low loss and cross talk, IEEE Electron Device Lett., vol. 21, no. 9, pp. 442-444, 2000. [20]A. B. M. H. Rashid, S. Watanabe, and T. Kikkawa, High transmission gain integrated antenna on extremely high resistivity Si for ULSI wireless interconnect, IEEE Electron Device Lett., vol. 23, no. 12, pp. 731-733, 2002. [21]L. S. Lee et al., Isolation on Si wafers by MeV proton bombardment for RF integrated circuits, IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 928-935, 2001. [22]W. Wondrak and A. Boos, Helium Implantation for Lifetime Control in Silicon Power Devices, ESSDERC 87 17th Eur. Solid State Device Res. Conf., pp. 649-652, 1987. [23]R. Wu et al., A 60-GHz efficiency-enhanced on-chip dipole antenna using helium-3 ion implantation process, 2014 44th Eur. Microw. Conf., pp. 108-111, 2014. [24]N. Li et al., High-Q inductors on locally semi-insulated Si substrate by helium-3 bombardment for RF CMOS integrated circuits, 2014 Symp. VLSI Technol. Dig. Tech. Pap., pp. 1-2, 2014. [25]N. Li et al., Substrate noise isolation improvement by helium-3 ion irradiation technique in a triple-well CMOS process, 2015 45th Eur. 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An Analysis of Margaret Atwoods Siren Song Essay examples -- Siren So

An Analysis of Margaret Atwood's Siren Song Throughout her many years as a poet, Margaret Atwood has dealt with a variety of subjects within the spectrum of relationship dynamics and the way men and women behave in romantic association. In much of her poetry, Atwood has addressed the topics of female subjugation in correlation with male domination, individual dynamics, and even female domination over males within the invisible boundaries of romantic relationships. With every poem written, Atwood's method for conveying the message of the poem has remained cryptic. She uses a variety of poetic devices - sometimes layered quite thickly - to communicate those themes dealing with human emotion. In the poem, Siren Song, Margaret Atwood employs such devices as imagery and tone to express and comment on the role of the dominating "siren" that some women choose to play in their relationships.   Ã‚  Ã‚  Ã‚  Ã‚  Ã‚  Ã‚  Ã‚  Ã‚  Ã‚  Ã‚  "Siren Song" opens with the feel that the reader has just walked into a story being told by the speaker. It even seems to give the effect of literally walking a few moments late into a storytelling session. In this particular session, the speaker seems to be a woman portraying herself as a siren of ancient Greek lore. In literature, these mythological beings are most frequently described as creatures with the face of a woman and the feathered body of a bird, cursed to exist as such by the goddess Demeter. They were cursed for having stood by during the kidnapping of Demeter's daughter Persephone, when Hades whisked her away to the underworld. The sirens supposedly lived on a series of rocky islands and, with the irresistible charm of their songs, they lured mariners to their destruction on the rocks surrounding the islands. The ima... ... with them without denying herself the right to exist on her own terms. She does not fear her own nature, and she is not afraid to play the dominant role. Being a siren, though, means never truly getting close to anyone - victims do not last long - and so, on some level, her words must be double-edged. She may not be afraid and she may not regret the so-called deaths of these men, but she does seem to regret the death of something else. Perhaps this something else is her own heart, now seemingly incapable of 'normal' sentiment. This siren may not only be a portrait of a specific female role in romantic relationships, but she may also be a form of commentary on that role. The siren may also be seen as a depiction of the loneliness that stems from toying with the human heart. With her song, she provides a warning to the readers about the fate that follows such games.

History of the Magna Carta :: essays research papers

The Magna Carta is often thought of as the cornerstone of liberty and a defense against unjust rule in England. The Magna Carta is also a type of constitution. Just like the English have the Magna Carta, the Americans have the Constitution. To better describe the Magna Carta I’m going to tell you some more about the line of events that led up to this famous document. First there was the landing of the pilgrims in 1620 at the Plymoth Rock â€Å"for the glory of god and the advancement of the Christian faith†. Prior to this happening, another course of events unfolded in England. In 500 (?)A.D., the Anglo-Saxons conquered England bringing Roman Catholicism with them. Only the new Latin Bible was available to the people and the pagan rulers had that in mind so the people couldn’t read it. Two important men, John Wycliffe and William Tyndale tried to translate this new Bible. The church didn’t like this and burned the translated Bibles and killed Tyndale. The idea of a limited government came from the Anglo-Saxons. Before-hand, the King’s counselors were called Witan, but when the Norman conquered they changed the name to Parliament. This is how the Parliament came to be. Another event that connects the colonist and the English together is the event of a hated King in England trying to take away freedom and go back to the old ways. The idea of how much power the King had struck Parliament. After that, the Parliament and the people made the King sign the Magna Carta, which limits the amount of power the King has. The Magna Carta also affected the rights of the American colonies. It practically took away all relationships between the King and the colonies. After the relationship was broken, America broke off from England. All of this happened because of the Magna Carta. The Magna Carta introduced the idea of placing the King under the law of the land.

A Wall of Fire Rising Essay

An image that was prevalent in this story was the hot air balloon. The hot air balloon represented freedom for Guy, who was trying to escape the unfair poverty that his family was experiencing. This symbol of freedom is first introduced to the reader when Guy, his wife Lili, and their son all go down to the sugar mill to hear the evening news that is displayed for them. This is a little place of enjoyment that they have found since they don’t go and sit with everyone else, â€Å"where in the past year they had discovered their own wonder.† I thought it was fitting that Danticat separated Guy and the balloon with barbed wire. It was like he wasn’t supposed to be free. â€Å"As Guy pushed his hand through the barbed wire, she could tell from the look on his face that he was thinking of sitting inside the square basket while the sooth rainbow surface of the balloon itself floated above his head†, this was foreshadowing that he would end up in that balloon of freedom one day. Before Guy jumped out of the balloon, he was asking Lili how she thought a man is judged after he is gone. She responded with â€Å"A man is judged by his deeds, the boy never goes to bed hungry.† Guy took this as an approval to go forth with his search for freedom. Guy is not judged after death based on the act of killing himself, he is judged based on his deeds and actions while he was alive. I was definitely caught off guard when he jumped out of the balloon. Why didn’t he take his family with him!? When Lili and Guy were lying in the grass together he said â€Å"Sometimes I just want to take that big balloon and ride it up in the air. I’d like to sail off somewhere and keep floating until I got to a really nice place with a nice plot of land where I could be something new. I’d build my own house, keep my own garden. Just be something new.† I was left wondering what his little family would do to survive now. He was the main provider and Lili was always building him up and trying to make him feel like a man. I was also confused as to why Guy would want to put his son on the list to work at the mill if that’s not what Guy even wanted to do in his life. I would have thought he would feel the same way as his wife in that he would want a better life for their son instead of just working at the only mill in the area.